基本情况

职  称： 教授

学  位： 博士

出生年月：1971-07

毕业学校： 吉林大学

联系电话： 020-39336462

电子邮件： zhbaij@mail.sysu.edu.cn

 

教育背景

1994.9-1997.12 吉林大学 半导体物理与器件，博士（主要从事1.3微米高速高功率InGaAsP/InP半导体激光器的研究工作）

1991.9-1994.07 吉林大学 半导体物理与器件，硕士

1987.9-1991.07 吉林大学 半导体物理，本科

 

工作履历

1998.03-2000.05 中国科学院半导体研究所，博士后。主要从事半导体激光器芯片高频特性测试及高速封装；DFB激光器与EA调制器集成技术。

2000.05-2002.05 日本名古屋工业大学极微构造器件研究中心，日本学术振兴会（JSPS）特别研究员。主要从事硅衬底GaN基发光二极管（LED）的研究工作。

2002.05-2006.08 日本名古屋工业大学纳米器件与系统研究中心（原极微构造器件研究中心）研究员。主要从事硅衬底GaN基发光二极管（LED）的研究工作。

2006.09-至今 中山大学，“百人计划”教授。近年来一直从事硅衬底GaN基生长及器件方面的研究工作。

 

学术兼职

1、《功能材料》第七届、第八届编辑委员会委员

2、粤港澳合作促进会信息科技专业委员会会员

 

研究领域

宽禁带化合物半导体材料与器件

 

研究方向

1、宽禁带GaN基半导体发光材料与器件；

2、微纳尺度GaN基发光器件；

3、半导体生物传感器；

4、GaN基太赫兹器件。

 

主讲课程

本科生课程：1、半导体光电子器件；2、半导体光电材料与器件；3、光电器件制造工程技术

研究生课程：1、新型半导体发光器件；2、半导体光电器件基础

 

学术成果

【学术表现】

 

【主要论著】

综述论文：Baijun Zhang* and Yang Liu, “A review of GaN based optoelectronic devices on silicon substrate”, Chinese Science Bulletin, 59, Issue 12, pp 1251-1275 (2014)

书籍章节：Handbook of Solid-State Lighting and LEDs (Chapter 19, III-Nitride Semiconductor LEDs Grown on Silicon and Stress Control of GaN Epitaxial Layers), CRC press, Taylor & Francis Group, 2017

代表性论文：

(36) Xiaobiao Han, Yuebo Liu, Yuan Ren, Jieying Xing, Tongtong Zhu, Zhisheng Wu, Yang Liu, Baijun Zhang*, Semipolar {112̅ 2} InGaN/GaN multiple quantum well optically pumped laser diodes selectively grown on Si (111) substrates，Materials Science in Semiconductor Processing, 91, 327–332, (2019)

(35) Jieying Xing, Dejia Huang, Yaqiong Dai, Yuebo Liu, Yuan Ren, Xiaobiao Han, Hang Yang, Yaqian Hou, Zhisheng Wu, Yang Liu, and Baijun Zhang*, Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors, J. Appl. Phys. 124, 034904 (2018)

(34) Xiaobiao Han, Hui Luo, Hang Yang, Jie Chen, Changming Zhong, Jiezhi Liang, Jieying Xing, Zhisheng Wu, Yang Liu* and Baijun Zhang*, Effects of surface migration on InGaN/GaN multiple quantum wells selectively grown on periodic stripe openings separated by large SiO2 covered spacing on Si (111) substrates, Materials Science in Semiconductor Processing, 87, 181–186, (2018)

(33) Jieying Xing, Yinsong Chen, Yuebo Liu, Jiezhi Liang, Jie Chen, Yuan Ren, Xiaobiao Han, Changming Zhong, Hang Yang, Dejia Huang, Yaqian Hou, Zhisheng Wu, Yang Liu and Baijun Zhang*, Enhancement of Emission of InGaN/GaN Multiple-Quantum-Well Nanorods by Coupling to Au-Nanoparticle Plasmons, J. Appl. Phys. 123, 193101 (2018)

(32) Jie Chen, Xiaobiao Han, Puman Huang, Weijie Chen, Jiezhi Liang, Changming Zhong, Zhengzhou Pan, Zhisheng Wub, Yang Liu, Baijun Zhang*, Schottky performance variation on r-plane and c-plane of GaN micro, truncated-pyramid grown by selective area MOCVD, Materials Science in Semiconductor Processing 63, 248–252 (2017)

(31) Jie Chen, Pu-Man Huang, Xiao-Biao Han,Zheng-Zhou Pan, Chang-Ming Zhong, Jie-Zhi Liang,Zhi-Sheng Wu, Yang Liu* and Baijun Zhang*, Influence of adatom migration on wrinkling morphologies ofAlGaN/GaN micro-pyramids grown by selective MOVPE, Chinese Physics B26, 068101 (2017).

(30) Qiang Liao, Yibin Yang, Weijie Chen, Xiaobiao Han, Jie Chen, Wenjie Zang, Hui Luo, Jiali Lin, Yunling Qiu, Yinsong Chen, Jingting Wei, Zhisheng Wu, Iatneng Chan, Yang Liu*, and Baijun Zhang*, Fabrication and properties of thin-film InGaN/GaN multiple quantum well light-emitting diodes transferred from Si (111) substrate onto a thin epoxy resin carrier, Journal of Display Technology Vol. 12 (12), pp. 1602-1608 (2016).

(29) Jingting Wei, Baijun Zhang and Gang Wang, Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate, Chinese Journal of Electronics, Vol.25, No.4, pp672-677 (2016)

(28) Weijie Chen, Jiali Lin, Yinsong Chen, Xiaobiao Han, Jie Chen, Qiang Liao, Yunling Qiu, Zhisheng Wu, Yang Liu*, and Baijun Zhang*, Dual-color InGaN/GaN Pyramidal Micro Light-emitting Diode Selectively Grown on SiO2 Masked Si Substrate, Journal of Display Technology, Vol. 12(4), pp 412-416, (2016) 

(27) Weijie Chen, Xiaobiao Han, Jiali Lin, Guoheng Hu, Minggang Liu, Yibin Yang, Jie Chen, Zhisheng Wu, Yang Liu, and Baijun Zhang*, Migration characterizations of Ga and In adatoms on dielectric surface in selective MOVPE, Chinese Physics B, Vol. 24 (11), 118101 (2015)

(26) Yibin Yang, Minggang Liu, Weijie Chen, Xiaobiao Han, Jie Chen, Xiuqi Lin, Jiali Lin, Hui Luo, Qiang Liao, Wenjie Zang, Yinsong Chen, Yunling Qiu, Zhisheng Wu, Yang Liu*, and Baijun Zhang*, In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in MOCVD system, Chinese Physics B. Vol. 24 (9), 096103 (2015)

(25) Weijie Chen, Jiali Lin, Guoheng Hu, Xiaobiao Han, Minggang Liu, Yibin Yang, Zhisheng Wu, Yang Liu, and Baijun Zhang*, GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid, J. Crys. Growth 426, pp. 168-172 (2015)

(24) Yibin Yang, Yuan Ren, Yangxiang Chen, Minggang Liu, Weijie Chen, Xiaobiao Han, Xiuqi Lin, Qiang Liao, Wenjie Zang, Hui Luo, Jiali Lin, Zhisheng Wu, Yang Liu, and Baijun Zhang*, Light output enhancement of GaN-based light-emitting diodes by maskless surface roughening, Microelectronic Engineering (MEE), 139, pp. 39-42 (2015)

(23) Minggang Liu, Yibin Yang, Peng Xiang, Weijie Chen, Xiaobiao Han, Xiuqi Lin, Jiali Lin, Hui Luo, Qiang Liao, Wenjie Zang, Zhisheng Wu, Yang Liu and Baijun Zhang*, Influences of Stress on the Properties of GaN/InGaN Multiple Quantum Wells LEDs Grown on Si (111) Substrate, Chinese Physics B. Vol. 24 (6), 068503 (2015)

(22) Weijie Chen, Guoheng Hu, Jianliang Jiang, Minggang Liu, Yibin Yang, Peng Xiang, Gangwei Hu, Yan Lin, Zhisheng Wu, Yang Liu and Baijun Zhang*, "Electrically Driven Single Pyramid InGaN/GaN Micro Light-emitting Diode Grown on Silicon Substrate," Journal of Display Technology, Vol. 11 (3), March, pp. 285-291 (2015)

(21) Weijie Chen, Guoheng Hu, Jiali Lin, Jianliang Jiang, Minggang Liu, Yibin Yang, Gangwei Hu, Yan Lin, Zhisheng Wu, Yang Liu and Baijun Zhang*, High-performance single pyramid micro light-emitting diode with leakage current confined layer, Applied Physics Express 8, 032102 (2015)

(20) Minggang Liu, Yunqian Wang, Yibin Yang, Xiuqi Lin, Peng Xiang, Weijie Chen, Xiaobiao Han, Wenjie Zang, Qiang Liao, Jiali Lin, Hui Luo, Zhisheng Wu, Yang Liu, Baijun Zhang*, Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes, Chinese Physics B. Vol. 24 (3), 038503 (2015)

(19) Yibin Yang, Gangwei Hu, Peng Xiang, Minggang Liu, Weijie Chen, Xiaobiao Han, Guoheng Hu, Yan Lin, Xiuqi Lin, Wenjie Zang, Zhisheng Wu, Yang Liu, and Baijun Zhang*, "Enhancement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with TiO2/SiO2-Al omnidirectional reflector," Journal of Display Technology. Vol. 10 ( 12), pp. 1064-1069 (2014)

(18) Yibin Yang, Yan Lin, Peng Xiang, Minggang Liu, Weijie Chen, Xiaobiao Han, Gangwei Hu, Guoheng Hu, Wenjie Zang, Xiuqi Lin, Zhisheng Wu, Yang Liu, and Baijun Zhang*, “Vertical-conducting InGaN/GaN multiple quantum wells LEDs with AlN/GaN distributed Bragg reflectors on Si(111) substrate”, Applied Physics Express 7, 042102 (2014).

(17) Peng Xiang, Yibin Yang, Minggang Liu, Weijie Chen, Xiaobiao Han, Yan Lin, Gangwei Hu, Guoheng Hu, Hui Luo, Jianliang Jiang, Jiali Lin, Zhisheng Wu, Yang Liu, Baijun Zhang*, “Influences of periodic Si delta-doping on the characteristics of n-GaN grown on Si (111) substrate”, J. Crys. Growth 387, 106–110 (2014).

(16) Yibin Yang, Peng Xiang, Minggang Liu, Weijie Chen, Zhiyuan He, Xiaobiao Han, Yiqiang Ni, Fan Yang, Yao Yao, Zhisheng Wu, Yang Liu, and Baijun Zhang*, “Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminum flow rates on the properties of GaN on Si (111) substrates”, J. Crys. Growth 376, 23–27 (2013).

(15) Peng Xiang, Minggang Liu, Yibin Yang, Weijie Chen, Zhiyuan He, Ka Kuen Leung, Charles Surya, Xiaobiao Han, Zhisheng Wu, Yang Liu, and Baijun Zhang*, “Improving the Quality of GaN on Si(111) Substrate with a Medium-Temperature/High-Temperature Bilayer AlN Buffer”, Jpn. J. Appl. Phys. 52, 08JB18 (2013).

(14) Tufu Chen, Yunqian Wang, Peng Xiang, Ruihong Luo, Minggang Liu, Weimin Yang, Yuan Ren, Zhiyuan He, Yibin Yang, Weijie Chen, Xiaorong Zhang, Zhisheng Wu, Yang Liu, and Baijun Zhang*, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes”, Appl. Phys. Lett. Vol.100, 241112 (2012).

(13) Ruihong Luo, Wentao Rao, Tufu Chen, Peng Xiang, Minggang Liu, Weimin Yang, Yunqian Wang, Yibin Yang, Zhisheng Wu, Yang Liu, Hao Jiang, and Baijun Zhang*, “Vertical InGaN Multiple Quantum Wells Light-Emitting Diodes Structures Transferred from Si(111) Substrate onto Electroplating Copper Submount with Through-Holes”, Jpn. J. Appl. Phys.51, 012101 (2012).

(12) Ruihong Luo, Peng Xiang, Minggang Liu, Tufu Chen, Zhiyuan Zheng, Bingfeng Fan, Yu Zhao, Yulun Xian, Shanjin Huang, Zhiyuan Zheng, Zhisheng Wu, Hao Jiang, Gang Wang, Yang Liu, Baijun Zhang*, “Influence of V/III ratio of low temperature growth AlN interlayer on the growth of GaN on Si(111) substrate”, Jpn. J. Appl. Phys. 50, 105501 (2011).

(11) Ruihong Luo, Peng Xiang, Minggang Liu, Tufu Chen, Zhiyuan He, Bingfeng Fan, Yu Zhao1, Yulun Xian, Zhisheng Wu, Hao Jiang, Gang Wang, Yang Liu, and Baijun Zhang*, “High Quality GaN Grown on Si(111) Using Fast Coalescence Growth”, Jpn. J. Appl. Phys. 50, 121001 (2011).

(10) Jingting Wei, Baijun Zhang*, Gang Wang, Bingfeng Fan, Yang Liu, Wentao Rao, Zhicong Huang, Weimin Yang, Tufu Chen, and Takashi Egawa, “Vertical GaN-Based Light-Emitting Diodes Structure on Si(111) Substrate with Through-Holes”, Jpn. J. Appl. Phys. 49, 072104 (2010).

(9) T. Egawa, B. Zhang, H. Ishikawa, High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD, IEEE ELECTRON DEVICE LETTERS, Vol. 26, pp.169 – 171 (2005).

(8) Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa, Yang Liu, and Takashi Jimbo, Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off, Appl. Phys. Lett. 86, 071113 (2005).

(7) Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa, Yang Liu, and Takashi Jimbo, Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template, J. Appl. Phys. 95, 3170 (2004).

(6) Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa, Yang Liu and Takashi Jimbo, High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer, Japanese Journal of Applied Physics 42, pp. L226-L228 (2003).

(5) Baijun Zhang, Takashi Egawa, Yang Liu, Hiroyasu Ishikawa, and Takashi Jimbo, InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition, phys. stat. sol. (c) 0, No. 7, 2244–2247 (2003).

(4) Hiroyasu Ishikawa, Baijun Zhang, Takashi Egawa and Takashi Jimbo, Valence-Band Discontinuity at the AlN/Si Interface, Japanese Journal of Applied Physics 42, pp. 6413-6414 (2003).

(3) T. Egawa, B. Zhang, N. Nishikawa, H. Ishikawa, T. Jimbo, and M. Umeno, InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition, J. Appl. Phys. 91, 528 (2002).

(2) B. Zhang, T. Egawa, G. Y. Zhao, H. Ishikawa, M. Umeno, and T. Jimbo, Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates, Appl. Phys. Lett. 79, 2567 (2001).

(1) B. Zhang, T. Egawa, H. Ishikawa, N. N Ishikawa, T. Jimbo, and M. Umeno, InGaN Multiple-Quantum-Well Light Emitting Diodes on Si (111) Substrates, phys. stat. sol. (a) 188, pp. 151–154 (2001).

【科研课题】

1、国家自然科学基金面上项目： 单颗独立工作的微纳尺度硅衬底GaN基发光器件研究

2、国家自然科学基金面上项目：硅衬底GaN基LED异质外延生长及器件制备中应力研究

3、 广州市产学研协同创新重大专项项目：AlGaN/GaN异质结构全固态pH传感器

4、 广东省对外科技合作项目, 4英寸硅衬底GaN外延材料生长及其应用研究

5、国家重点研发计划项目：GaN基新型电力电子器件关键技术（参加）

6、国家重点研发计划项目：大失配、强极化第三代半导体材料体系外延生长动力学和载流子调控规律（参加）

7、广东省应用型科技研发专项资金项目：低成本高效的去背光源化可穿戴智能眼镜（参加）

【发明专利】

 

【学术会议报告】

 

 

奖励与荣誉

日本 JSPS Research Fellowship

中山大学百人计划