职  称： 教授

学  位： 博士

毕业学校： 吉林大学

联系电话： 020-39943836

电子邮件： liuy69@mail.sysu.edu.cn

主要经历:

刘扬，中山大学物理科学与工程技术学院教授，博士生导师。1991年、1994年和2000年于吉林大学电子科学与工程学院微电子学和固体电子学专业分别获得学士、硕士和博士学位。2001年赴日本名古屋工业大学纳米器件与系统研究中心访问研究，2002年-2004年被聘为日本学术振兴会(JSPS)外国人特别研究员。在日期间主要从事GaN基发光器件及电力电子器件的MOCVD外延生长和器件制作研究，承担完成日本文部科学省和日本企业横向课题多项。2007年5月作为中山大学“百人计划”引进人才，受聘于中山大学理工学院，并全面负责GaN电力电子器件的外延、器件制备及其系统集成技术的研究工作。

教育经历:

博士（2000年），吉林大学微电子学与固体电子学专业

学士（1991年）硕士（1994年）吉林大学半导体物理与半导体器件物理专业

授课课程: 

本科:《微电子学导论》《半导体物理导论》《基础物理实验课》

研究生：《宽禁带半导体材料与器件》

学科方向:

所在学科：微电子学与固体电子学、光学工程

研究方向：宽禁带III族氮化物半导体材料与器件研究，具体包括以下几个方面：

1. 应用于GaN基电力电子器件的III族氮化物半导体材料MOCVD外延生长及材料物性研究

2. GaN基光电器件的制备及其器件物理的研究

3. 功率型GaN基肖特基势垒二极管(SBD)的制备及其器件物理的研究

4. 功率型GaN基场效应开关晶体体管(FET)的制备及其器件物理的研究

5. GaN基MOSFET用绝缘栅介质材料特性及MOS界面特性的研究

6. 新型GaN电力电子器件在电源管理、光伏逆变、电机驱动等方向的系统集成技术研究

招生计划：每年计划招收博士后1-2名，博士研究生2-3名，硕士研究生3-5名

学术兼职和社会服务:

1. IEEE ISPSD（ International Symposium on Power Semiconductor Devices & ICs），Technical Program Committee (TPC) Member）

2. IEEE EDS (Electron Devices Society) Power Devices and ICs Committee Member

3. 中国电源学会理事

4. 中国电工学会电力电子学会理事

5. 中国电源学会元器件专业委员会委员

6. 中国宽禁带功率半导体产业联盟专家委员会GaN器件组成员

7. 中国有色金属学会宽禁带半导体专业委员会委员

8.《电力电子技术》杂志编辑委会委员

9.  2017年《电力电子技术》“宽禁带半导体电力电子器件”专辑特邀主编

10. 2019年《电源学报》“GaN功率电子器件及应用”专辑特邀主编

科研项目: 

主持承担了国家重点研发计划课题项目、国家自然基金面上及重点项目、国家科技部国际合作项目、省重大科技项目、省自然基金团队、省国际合作项目十余项。目前在研项目有：

1. 国家重点研发计划课题项目，主持

2. 国家自然科学基金联合基金重点项目，主持

3. 广东省应用型科技研发专项资金项目，主持

4. 广东省自然科学基金团队项目，主持

代表性科研成果: 

  1. L.A. Li, W.J. Wang, L. He, X.R Zhang , Z.S Wu, Yang Liu*，Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device, Journal of Alloys and Compounds ,Vol.728, p400-403, 2017.09
  2. L. He, L.A. Li, Y. Zheng, F. Yang, Z. Shen, Z. J. Chen, W.J. Wang, J. l. Zhang, X. R. Zhang, L. He, Z.S Wu, B.J. Zhang, Yang Liu*, The Influence of Al composition in AlGaN back barrier layer on leakage current and dynamic RON characteristics of AlGaN/GaN HEMTs, Physica Status Solidi A, Vol.214,No.8, p1600824, 2017.08
  3. L.A. Li, W.J. Wang, L. He, J. L. Zhang, Z.S Wu, B.J. Zhang, Yang Liu*, Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application, Materials Science in Semiconductor Processing, Vol.67, p141-146, 2017.08
  4. Z. J. Chen, L.A. Li, Z.Y. He, F. Yang, L. He, Z.S Wu, B.J. Zhang, Yang Liu*, Enhanced voltage blocking ability of AlGaN/GaN HFETs-on-Si by eliminating leakage path introduced by LT-AlN interlayers, Japanese Journal of Applied Physics, Vol.56, No.6,p065503, 2017.06
  5. L. He, F. Yang, L.A. Li, Z. J. Chen, Z. Shen, Y. Zheng, Y. Yao , Y.Q. Ni, D.Q. Zhou, X.R Zhang, L. He, Z.S Wu, B.J. Zhang,Yang Liu*, High Threshold Voltage Uniformity and Low Hysteresis Recessed Gate Al2O3/AlN/GaN MISFET by Selective Area Growth, IEEE Transactions on Electron Devices, VOL. 64, NO. 4, p1554-1560, 2017.04
  6. Z. Shen, L. He, G.L. Zhou, Y. Yao, F. Yang, Y.Q. Ni, Y. Zheng, D.Q. Zhou, J.P. Ao , B.J. Zhang, Yang Liu*, Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors, physica status solidi (a), Vol.213, No.10, pp 2693-8, 2016.10
  7. Y. Zheng, F. Yang, L. He, Y. Yao, Z. Shen, G.L. Zhou, Z.Y. He, Y.Q. Ni, D. Q.Zhou, J. Zhong, X. R. Zhang, L. He, Z. S. Wu, B. J. Zhang, Yang. Liu*, Selective Area Growth: A Promising Way for Recessed Gate GaN MOSFET With High Quality MOS Interface, IEEE Electronic Devices Letters, Vol. 37, No.9, p1193-1196, 2016.09
  8. F. Yang, L. He, Y. Zheng, L.A. Li, Z. J. Chen, D.Q. Zhou, Z.Y. He, Y. Yao, Y.Q. Ni, Z. Shen, X. R. Zhang, L. He, Z.S Wu, B. J. Zhang, Yang Liu* , Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure, Journal of Materials Science: Materials in Electronics, Vol.27, Issue 9, pp 9061–9066, 2016.09
  9. Y.Q. Ni, L. He, D.Q. Zhou, Z.Y. He, Z. J. Chen, Y. Zheng, F. Yang, Z. Shen, X. R. Zhang, L. He, Z.S Wu, B. J. Zhang, Yang Liu*, Low-leakage current and high-breakdown voltage GaN-on-Si(111) System with an AlGaN impurity blocking layer, Journal of Materials Science: Materials in Electronics, Vol.27, Issue 5, pp 5158-5163, 2016.05
  10. D.Q. Zhou, Y.Q. Ni, Z.Y. He, F. Yang, Y. Yao, Z. Shen, J. Zhong, G.L. Zhou, Y. Zheng, L. He, Z.S Wu, B. J. Zhang, Yang Liu*, Investigation of breakdown properties in the carbon doped GaN by photoluminescence analysis, physica status solidi (c), Vol. 13, No.5-6, p.345-349, 2016.05
  11. L.A. Li, X.Z. Wang, Yang Liu*, J.P. Ao*, NiO/GaN heterojunction diode deposited through magnetron reactive sputtering, Journal of Vacuum Science& Technology A, Vol. 34, Issue 2, p02D104, 2016.03
  12. L.A. Li, J.Q. Zhang, Yang Liu*, and J.P. Ao*, Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature, Chinese Physics B, Vol. 25, No.3, p038503, 2016.03
  13. Y.Q. Ni, D.Q. Zhou, Z. J. Chen, Y. Zheng, Z.Y. He, F. Yang, Y. Yao, G.L. Zhou, Z. Shen, J. Zhong, Z.S Wu, B. J. Zhang, Yang Liu*, Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate, Semiconductor Science and Technology, Vol.30, p105037 (9p), 2015.09
  14. F. Yang, Y. Yao, Z.Y. He, G.L. Zhou, Y. Zheng, L. He, J.C. Zhang, Y.Q. Ni, D.Q. Zhou, Z. Shen, J. Zhong, Z.S Wu, B. J. Zhang, Yang Liu*, The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET, Journal of Materials Science: Materials in Electronics, Vol.26, Issue 12, p9753-9758, 2015.09
  15. J. Zhong, Y. Yao, Y. Zheng, F. Yang, Y.Q. Ni, Z.Y. He, Z. Shen, G.L. Zhou, D.Q. Zhou, Z.S Wu, B. J. Zhang,  Liu Yang*, Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode, Chinese Physics B, Vol. 24, No. 9, p097303, 2015.09
  16. Y. Jiang, Q.P. Wang, F.Z. Zhang, L.A. Li, D.Q. Zhou, Yang Liu, Dejun Wang, Jin-Ping Ao*, Reduction of leakage current by O2plasma treatment for deviceisolation of AlGaN/GaN heterojunction field-effect transistors, Applied Surface Science,Vol.351, p1155–1160,2015.06
  17. Y.Q. Ni, Z.Y. He, Y. Yao, F. Yang, D.Q. Zhou, G.L. Zhou, Z. Shen, J. Zhong n, Y. Zheng, B. J. Zhang, Liu Yang*, Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate, Chinese Physics B, Vol. 24, No. 5, p057303 , 2015.05
  18. Y.Q. Ni, Z.Y. He, D.Q. Zhou, Y. Yao, F. Yang, G.L. Zhou, Z. Shen, J. Zhong, Y. Zheng, B. J. Zhang, Yang Liu*, The influences of AlN/GaN superlattices buffer on the characteristics of AlGaN/GaN-on-Si(111) template, Superlattices and Microstructures, Vol.83, p811–818 , 2015.03
  19. Y. Yao, J. Zhong, Y. Zheng, F. Yang, Y.Q. Ni, Z.Y. He, Z. Shen, G.L. Zhou, S. Wang, J.C.  Zhang, J. Li, D.Q. Zhou, Z.S Wu, B. J. Zhang, Yang Liu*, Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode, Japanese Journal of Applied Physics, Vol. 54, p011001 ,2015.01
  20. Y.Q. Ni, Z.Y. He, F. Yang, D.Q. Zhou, Y. Yao, G.L. Zhou, Z. Shen, J. Zhong, Y. Zheng, Z.S Wu, B. J. Zhang, Yang Liu*, Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system, Japanese Journal of Applied Physics, Vol. 54, p015505 ,2015.01
  21. Y. Yao, Z.Y. He, F. Yang, Z. Shen, J.C. Zhang, Y.Q. Ni, Jin Li, S. Wang, G.L. Zhou, J. Zhong, Z.S Wu, B. J. Zhang, J.P. Ao and Yang Liu*, Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique, Applied Physics Express. Vol. 7, No. 1, p016502,2014.01
  22. Z.Y. He, Y.Q. Ni, F. Yang, J. Wei, Y. Yao, Z. Shen, P. Xiang, M.G. Liu, S. Wang, J.C. Zhang, Z.S Wu, B. J. Zhang, and Yang Liu*, Investigations of leakage current properties in semi-insulating GaN grown on Si (111) substrate with low-temperature AlN interlayers, Journal of Physics D: Applied Physics, Vol. 47, No. 4, p045103 ,2014.01
  23. Y.Q. Ni, Z.Y. He, J. Zhong, Y. Yao, F. Yang, P. Xiang, B. J. Zhang, and Liu Yang*, Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers, Chinese Physics B, Vol. 22, No. 8, p088104,2013.04
  24. Z.Y. He, J.L. Li, Y.H. Wen, Z. Shen, Y. Yao, F. Yang, Y.Q. Ni, Z.S Wu, B. J. Zhang, and Yang Liu*, Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors, Japanese Journal of Applied Physics, Vol.51, p054103,2012.05
  25. Y.H. Wen, Z.Y. He, J.L. Li, R.H. Luo, P. Xiang, Q.Y. Deng, G.N. Xu, Z. Shen, Z.S Wu, B. J. Zhang, H. Jiang, G. Wang, and Yang Liu*, “Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique, Applied Physics Letters, Vol.98, p072108, 2011.02

荣誉获奖:

1999年参与完成的项目“AlGaAs超辐射发光管”，获得国家教育部颁发的科技进步三等奖。

2002-2004年日本学术振兴会(JSPS) Research Fellowship