职  称： 教授

学  位： 博士

毕业学校： 日本名古屋工业大学

联系电话： 020-39943836

电子邮件： stsjiang@mail.sysu.edu.cn

学科方向:

学科: 微电子学

研究方向: 宽禁带化合物半导体材料与器件

研究重点:

1.GaN基半导体材料(GaN/AlGaN/InGaN/AlInN/AlInGaN)的MOCVD外延生长及其特性表征；

2.GaN基LED外延技术研究；

3.高探测灵敏度GaN/AlGaN可见光盲/太阳盲紫外光探测器的制作及其性能评价；

4.紫外单光子探测技术研究.

每年计划招收博士后1-2名，博士研究生2名，硕士研究生2名。

代表论著:

* Zhiyuan Zheng, Zimin Chen, Yingda Chen, Shanjin Huang, Bingfeng Fan, Yulun Xian,Weiqing Jia, Zhisheng Wu, Gang Wang, and Hao Jiang,"Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers",Appl. Phys. Lett. 100, 212102 (2012).

* Yulun Xian,Shanjin Huang,Zhiyuan Zheng,Bingfeng Fan,Zhisheng Wu,Hao Jiang，and Gang Wang,"Effects of growth pressure on the properties of p-GaN layers", Journal of Crystal Growth 325 (2011)32.

* Zhiyuan Zheng, Zimin Chen, Yulun Xian, Bingfeng Fan, Shanjin Huang, Weiqing Jia,Zhisheng Wu, Gang Wang,a) and Hao Jiangb)“Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers”, Appl. Phys. Lett. 99, 111109 (2011).

* Shanjin Huang, Yulun Xian, Bingfeng Fan, Zhiyuan Zheng, Zimin Chen, Weiqing Jia, Hao Jiang, and Gang Wang,"Contrary luminescence behaviors of InGaN/GaN light emitting diodes caused by carrier tunneling leakage", J. Appl. Phys. 110, 064511 (2011).

* Shanjin Huang,Bingfeng Fan,Yulun Xian,Zhiyuan Zheng,Zhisheng Wu,Hao Jiang, and Gang Wang,"Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD",Journal of Crystal Growth 314 (2011)202.

* Lu Sun, Jilin Chen, Jianfei Li, and Hao Jiang,"AlGaN solar-blind avalanche photodiodes with high multiplication gain",Appl. Phys. Lett. 97, 191103 (2010).

* S. Senda, H. Jiang,and T. Egawa,"AlInN-based ultraviolet photodiode grown by metal organic chemical vapor deposition", Appl. Phys. Lett. 92, 203507 (2008).

* H. Jiang and T. Egawa, “Low dark current high performance AlGaN solar-blind p-i-n photodiodes”, Jpn. J. Appl. Phys., Part 1 47, 1541 (2008).

* H. Jiang and T. Egawa, “High quality AlGaN solar-blind Schottky photodiodes fabricated on AIN/sapphire template”, Appl. Phys. Lett. 90, 121121 (2007).

* H. Jiang, T. Egawa, and H. Isikawa, “AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC”, IEEE Photonics Technol. Lett. 18, 1353 (2006).

* H. Jiang and T. Egawa, “Demonstration of large active area AlGaN solar-blind Schottky photodiodes with low dark current”, Electron. Lett. 42, 1120 (2006).

* Y. Liu, T. Egawa, and H. Jiang, “Enhancement-mode quaternary AlInGaN/GaN HEMT with non-recessed-gate on sapphire substrate”, Electron. Lett. 42, 884 (2006).

* Y. Liu, H. Jiang, T. Egawa, B. Zhang, and H. Ishikawa, “Al composition dependent properties of quaternary AlInGaN Schottky diodes”, J. Appl. Phys. 99, 123702 (2006).

* H. Jiang, T. Egawa, M. Hao, and Y. Liu, “Reduction of threading dislocations in AlGaN layers grown on AlN/sapphire templates using high-temperature GaN interlayer”, Appl. Phys. Lett. 87, 241911 (2005).